Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO

被引：222

作者：

Koida, T

Chichibu, SF ^{[6
]}

Uedono, A

Tsukazaki, A

Kawasaki, M

Sota, T

Segawa, Y

Koinuma, H

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan

[3] Japan Sci & Technol Corp, ERATO, NICP, Tokyo 1020071, Japan

[4] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808755, Japan

[5] Waseda Univ, Dept Elect Elect & Comp Engn, Tokyo 1698555, Japan

[6] RIKEN, Photodynam Res Ctr, Sendai, Miyagi 9800868, Japan

[7] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2278503, Japan

[8] Combinatorial Mat Explorat & Technol, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 04期

关键词：

D O I：

10.1063/1.1540220

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Influences of point defects on the nonradiative processes in ZnO were studied using steady-state and time-resolved photoluminescence (PL) spectroscopy making a connection with the results of positron annihilation measurement. Free excitonic PL intensity naturally increased with the increase in the nonradiative PL lifetime (tau(nr)). Density or size of Zn vacancies (V-Zn) decreased and tau(nr) increased with increasing growth temperature in heteroepitaxial films grown on a ScAlMgO4 substrate. Use of homoepitaxial substrate further decreased the V-Zn density. However, tau(nr) was the shortest for the homoepitaxial film; i.e., no clear dependence was found between tau(nr) and density / size of V-Zn or positron scattering centers. The results indicated that nonradiative recombination processes are not solely governed by single point defects, but by certain defect species introduced by the presence of V-Zn such as vacancy complexes. (C) 2003 American Institute of Physics.

引用

页码：532 / 534

页数：3

共 23 条

[1] High temperature excitonic stimulated emission from ZnO epitaxial layers [J].