Strain-fields effects and reversal of the nature of the fundamental valence band of ZnO epilayers

被引：49

作者：

Gil, B

Lusson, A

Sallet, V

Said-Hassani, SA

Triboulet, R

Bigenwald, P

机构：

[1] Univ Montpellier 2, Etud Semicond Grp, F-34095 Montpellier 5, France

[2] CNRS, Lab Phys Solides Bellevue, F-92195 Bellevue, France

[3] Univ Avignon & Pays Vaucluse, F-84000 Avignon, France

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2001年 / 40卷 / 10B期

关键词：

widebandgap semiconductors; excitons; band structure effects; srain;

D O I：

10.1143/JJAP.40.L1089

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We examine the influence of strain fields in ZnO epilayers. We show that a reversal, of the nature of the fundamental valence band can be observed similarily to what was reported in GaN epilayers.

引用

页码：L1089 / L1092

页数：4

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