Photoreflectance spectra of a ZnO heteroepitaxial film on the nearly lattice-matched ScAlMgO4 (0001) substrate grown by laser molecular-beam epitaxy

被引：61

作者：

Chichibu, SF ^{[1
]}

Tsukazaki, A

Kawasaki, M

Tamura, K

Segawa, Y

Sota, T

Koinuma, H

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] RIKEN, Photodynam Res Ctr, Aoba Ku, Sendai, Miyagi 9800845, Japan

[3] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[4] Waseda Univ, Dept Elect Elect & Comp Engn, Tokyo 1698555, Japan

[5] Tokyo Inst Technol, Frontier Collaborate Res Ctr, Yokohama, Kanagawa 2278503, Japan

[6] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2278503, Japan

[7] COMET, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 16期

关键词：

D O I：

10.1063/1.1471374

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoreflectance spectra of a high-quality ZnO epilayer on the ScAlMgO4 (0001) substrate grown by laser molecular-beam epitaxy exhibited clear excitonic resonances due to three excitons associated with uppermost valence bands (A, B, and C excitons). The oscillator strengths of the B and C excitons are larger than that of the A exciton. Their broadening was interpreted to be due to the contribution by exciton-polaritons in terms of large longitudinal-transverse splitting of respective excitons. Dependence of the exciton energy on temperature was well fitted assuming the Bose-Einstein statistics giving the Einstein characteristic temperature Theta(E) of 380 K (33 meV). (C) 2002 American Institute of Physics.

引用

页码：2860 / 2862

页数：3

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