Oscillator strengths of A, B, and C excitons in ZnO films -: art. no. 201310

被引：79

作者：

Gil, B ^{[1
]}

机构：

[1] Univ Montpellier 2, Etud Semicond Grp, F-34095 Montpellier 5, France

来源：

PHYSICAL REVIEW B | 2001年 / 64卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.64.201310

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We examine how the short-range part of the electron-hole exchange interaction influences the strain-induced variations of the oscillator strength in ZnO films. Our model enables us to account for the surprisingly small oscillator strength of the A exciton in E perpendicular to c polarization without having to invoke any inverted valence-band scheme. We then conclude that the valence-band physics is very similar in both ZnO and GaN.

引用

页数：3

共 21 条

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