Recombination dynamics of luminescence in colloidal CdSe/ZrS quantum dots

被引：55

作者：

Lee, WZ

Shu, GW

Wang, JS

Shen, JL ^{[1
]}

Lin, CA

Chang, WH

Ruaan, RC

Chou, WC

Lu, CH

Lee, YC

机构：

[1] Chung Yuan Christian Univ, Dept Phys, Chungli, Taiwan

[2] Chung Yuan Christian Univ, Dept Biomed Engn, Chungli, Taiwan

[3] Natl Cent Univ, Dept Chem & Mat Engn, Chungli 32054, Taiwan

[4] Natl Chiao Tung Univ, Electrophys Dept, Hsinchu, Taiwan

[5] Natl Taiwan Univ, Dept Chem Engn, Taipei 10764, Taiwan

[6] Tung Nan Inst Technol, Dept Comp Sci & Informat Engn, Taipei, Taiwan

来源：

NANOTECHNOLOGY | 2005年 / 16卷 / 09期

关键词：

D O I：

10.1088/0957-4484/16/9/018

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Recombination dynamics of photoluminescence (PL) in colloidal CdSe/ZnS quantum dots (QDs) were studied using time-resolved PL measurements. The PL intensity shows a biexponential decay at 9 K, consisting of a fast component (similar to 1 ns) and a slow component (similar to 6.3 ns). Based on the emission-energy and temperature dependence of carrier lifetimes, we suggest that the fast and slow PL decay of colloidal CdSe/ZnS QDs originates from recombination of the delocalized carriers in the internal core states and the localized carriers at the interface, respectively.

引用

页码：1517 / 1521

页数：5

共 25 条

[1]

[Anonymous], 1973, OPTICAL PROCESSES SE

[2] Exploitation of optical interconnects in future server architectures [J].