Colossal magnetoresistance in La-Y-Ca-Mn-O films

被引：5

作者：

Chen, LH

Tiefel, TH

Jin, S

Palstra, TTM

Ramesh, R

Kwon, C

机构：

[1] AT&T BELL LABS,LUCENT TECHNOL,MURRAY HILL,NJ 07974

[2] UNIV MARYLAND,COLLEGE PK,MD 20742

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1996年 / 32卷 / 05期

关键词：

D O I：

10.1109/20.539120

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Magnetoresistance behavior of La0.60Y0.07CaMnOx thin films epitaxially grown on LaAlO3 has been investigated. The films exhibit colossal magnetoresistance with the MR ratio in excess of 10(8)% at similar to 60K, H = 7T, which is the highest ever reported for thin film manganites. The partial substitution of La3+ ions with much smaller Y3+ ions results in more than an order of magnitude improvement in MR as compared to the undoped La-Ca-Mn-O material, both in bulk and thin film form. The La-Y-Ca-Mn-O films exhibit a strong dependence of magneto-resistance on film thickness with the maximum MR occurring at a film thickness of similar to 1000 Angstrom.

引用

页码：4692 / 4694

页数：3

共 5 条

[1] LARGE MAGNETORESISTANCE IN LA-CA-MN-O FILMS [J].