Crystalline zirconia oxide on silicon as alternative gate dielectrics

被引：85

作者：

Wang, SJ ^{[1
]}

Ong, CK

Xu, SY

Chen, P

Tjiu, WC

Chai, JW

Huan, ACH

Yoo, WJ

Lim, JS

Feng, W

Choi, WK

机构：

[1] Natl Univ Singapore, Ctr Superconducting & Magnet Mat, Singapore 119260, Singapore

[2] Natl Univ Singapore, Dept Phys, Singapore 119260, Singapore

[3] Inst Mat Res & Engn, Singapore 117602, Singapore

[4] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 11期

关键词：

D O I：

10.1063/1.1354161

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial crystalline yittria-stabilized zirconia (YSZ) oxide films were grown on silicon wafers by the laser molecular beam epitaxy technique. The interface of crystalline YSZ film in contact with silicon was found to be atomically sharp and commensurately crystallized without an amorphous layer. An x-ray photoelectron spectroscopy depth profile and transmission electron microscopy investigation showed that no SiO2 formed at the interface. For a film with electrical equivalent oxide thickness (t(eox)) 14.6 Angstrom, the leakage current is about 1.1 x 10(-3) A/cm(2) at 1 V bias voltage. The hysteresis and interface state density in this film are measured to be less than 10 mV and 2.0 x 10(11) eV(-1) cm(-2), respectively. (C) 2001 American Institute of Physics.

引用

页码：1604 / 1606

页数：3

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