Direct-gap photoluminescence with tunable emission wavelength in Ge1-ySny alloys on silicon

被引：165

作者：

Mathews, J. ^{[1
]}

Beeler, R. T. ^{[2
]}

Tolle, J. ^{[2
]}

Xu, C. ^{[1
]}

Roucka, R. ^{[2
]}

Kouvetakis, J. ^{[2
]}

Menendez, J. ^{[1
]}

机构：

[1] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

[2] Arizona State Univ, Dept Chem & Biochem, Tempe, AZ 85287 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 22期

基金：

美国国家科学基金会;

关键词：

BAND-GAP; STRAIN;

D O I：

10.1063/1.3521391

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Direct-gap photoluminescence has been observed at room temperature in Ge1-ySny alloys grown on (001) Si substrates. The emission wavelength is tunable over a 90 meV (200 nm) range by increasing the Sn concentration from y=0 to y=0.03. A weaker feature at lower energy is assigned to the indirect gap transitions, and the separation between the direct and indirect emission peaks is found to decrease as a function of y, as expected for these alloys. These results suggest that Ge1-ySny alloys represent an attractive alternative to Ge for the fabrication of laser devices on Si. (C) 2010 American Institute of Physics. [doi:10.1063/1.3521391]

引用

页数：3

共 16 条

[11] Advances in SiGeSn technology [J].