Silicon-induced oriented ZnS nanobelts for hydrogen sensitivity

被引：63

作者：

Chen, Zhi-Gang ^{[1
,2
,3
]}

Zou, Jin ^{[2
,4
]}

Liu, Gang ^{[1
]}

Lu, Hao Feng ^{[1
]}

Li, Feng ^{[1
]}

Lu, Gao Qing ^{[2
,3
]}

Cheng, Hui Ming ^{[1
]}

机构：

[1] Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China

[2] Univ Queensland, ARC Ctr Excellence Funct Nanomat, Sch Engn, Brisbane, Qld 4072, Australia

[3] Univ Queensland, Australian Inst Bioengn & Nanotechnol, Brisbane, Qld 4072, Australia

[4] Univ Queensland, Ctr Microscopy & Microanal, Brisbane, Qld 4072, Australia

来源：

NANOTECHNOLOGY | 2008年 / 19卷 / 05期

关键词：

D O I：

10.1088/0957-4484/19/05/055710

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Oriented ZnS nanobelts were grown on an Si substrate using hydrogen-assisted thermal evaporation under moist gas conditions. It was found that these ZnS nanobelts had a single crystal hexagonal wurtzite structure growing along the [0001] direction. They had a rectangular cross section with lengths of up to tens of micrometres, a typical width of 50-150 nm, and a thickness of similar to 40 nm. A silicon-induced vapour-liquid-solid process was proposed for the formation of the ZnS nanobelts and their assembly. These oriented nanobelts have much faster response time to hydrogen gas than that of pure ZnO and Pd-sensitized ZnO, showing excellent hydrogen sensing properties.

引用

页数：5

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