High performance polythiophene thin-film transistors doped with very small amounts of an electron acceptor

被引：102

作者：

Ma, Liang ^{[1
]}

Lee, Wi Hyoung ^{[1
]}

Park, Yeong Don ^{[1
]}

Kim, Jong Soo ^{[1
]}

Lee, Hwa Sung ^{[1
]}

Choa, Kilwon ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 790784, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 06期

基金：

欧洲研究理事会;

关键词：

D O I：

10.1063/1.2883927

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The relationship between the electrical properties and the microstructure of poly(3-hexylthiophene) (P3HT) films doped with an electron acceptor, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F-4-TCNQ) has been studied. The introduction of F-4-TCNQ in very small quantities improved the device performance of P3HT thin-film transistors significantly. The field-effect mobility of a device doped with only 0.2 wt % F-4-TCNQ was enhanced by a factor of 30 with respect to that of a pure P3HT device. The threshold voltages of the P3HT thin-film transistors can also be controlled by adjusting the F-4-TCNQ concentration. These improvements are attributed to the doping-induced formation of charge-transfer complexes and improved molecular orientation of the P3HT. (C) 2008 American Institute of Physics.

引用

页数：3

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