n- and p-type behaviour of the gold-substituted type-I clathrate, Ba8AuxSi46-x(x=5.4 and 5.9)

被引：33

作者：

Jaussaud, N ^{[1
]}

Gravereau, P ^{[1
]}

Pechev, S ^{[1
]}

Chevalier, B ^{[1
]}

Ménétrier, M ^{[1
]}

Dordor, P ^{[1
]}

Decourt, R ^{[1
]}

Goglio, G ^{[1
]}

Cros, C ^{[1
]}

Pouchard, M ^{[1
]}

机构：

[1] Univ Bordeaux 1, CNRS, UPR 9048, Inst Chim Mat Condensee Bordeaux, F-33608 Pessac, France

来源：

COMPTES RENDUS CHIMIE | 2005年 / 8卷 / 01期

关键词：

thermoelectrics; clathrates; structures; seebeck; conductivity; NMR;

D O I：

10.1016/j.crci.2004.12.004

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Two samples of the gold-substituted silicon clathrate, Ba8AuxSi46-x, have been synthesized from the elements at high temperature. one without subsequent treatment (so-called AG for as-grown) and the other after annealing in a silica tube (so-called A for annealed). A structure analysis on single crystal of both samples shows that the x Au content for the AG and A sample is 5.4 and 5.9, respectively. Both samples have been characterized by Seebeck coefficient and electrical conductivity measurements. as well as by Si-29 MAS NMR spectroscopy. The AG sample is an n-type semi conductor close to a metal, whereas the A one exhibits a p-type metallic behaviour. The NMR spectra are consistent with a high contribution to the conductivity of the Si(3s) orbitals at the Fermi level.

引用

页码：39 / 46

页数：8

共 17 条

[1] WIDE-BAND-GAP SI IN OPEN FOURFOLD-COORDINATED CLATHRATE STRUCTURES [J].

ADAMS, GB ;

OKEEFFE, M ;

DEMKOV, AA ;

SANKEY, OF ;

HUANG, YM .

PHYSICAL REVIEW B, 1994, 49 (12) :8048-8053

[2] NEW TERNARY INTERMETALLIC COMPOUNDS WITH CLATHRATE STRUCTURE - BA8(T,SI)6SI40 AND BA6(T,GE)6GE40 WHERE T = NI, PD, PT, CU, AG, AU [J].

CORDIER, G ;

WOLL, P .

JOURNAL OF THE LESS-COMMON METALS, 1991, 169 (02) :291-302

[3] AUTOMATIC EQUIPMENT FOR RESISTIVITY MEASUREMENTS BETWEEN 4-K AND 1 100-K [J].

DORDOR, P ;

MARQUESTAUT, E ;

SALDUCCI, C ;

HAGENMULLER, P .

REVUE DE PHYSIQUE APPLIQUEE, 1985, 20 (11) :795-799

[4] APPARATUS FOR MEASURING THERMOELECTRIC-POWER IN HIGH-RESISTIVITY MATERIALS [J].

DORDOR, P ;

MARQUESTAUT, E ;

VILLENEUVE, G .

REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (11) :1607-1612

[5]

FUMIHIKO S, 1996, PHYS REV B, V54, P13242

[6] Electronic structure of Si and Ge gold-doped clathrates [J].

Herrmann, RFW ;

Tanigaki, K ;

Kawaguchi, T ;

Kuroshima, S ;

Zhou, O .

PHYSICAL REVIEW B, 1999, 60 (19) :13245-13248

[7] Why are clathrates good candidates for thermoelectric materials? [J].

Iversen, BB ;

Palmqvist, AEC ;

Cox, DE ;

Nolas, GS ;

Stucky, GD ;

Blake, NP ;

Metiu, H .

JOURNAL OF SOLID STATE CHEMISTRY, 2000, 149 (02) :455-458

[8] High pressure synthesis and crystal structure of two forms of a new tellurium-silicon clathrate related to the classical type I [J].

Jaussaud, N ;

Toulemonde, P ;

Pouchard, M ;

San Miguel, A ;

Gravereau, P ;

Pechev, S ;

Goglio, G ;

Cros, C .

SOLID STATE SCIENCES, 2004, 6 (05) :401-411

[9]

JAUSSAUD N, 2003, THESIS U BORDEAUX 1

[10] CLATHRATE STRUCTURE OF SILICON AND NAXSI136 (X[11) [J].

KASPER, JS ;

HAGENMULLER, P ;

POUCHARD, M ;

CROS, C .

SCIENCE, 1965, 150 (3704) :1713-+

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