Epitaxial growth of InN films on MgAl2O4 (111) substrates

被引：4

作者：

Tsuchiya, T ^{[1
]}

Miki, O ^{[1
]}

Shimada, K ^{[1
]}

Ohnishi, M ^{[1
]}

Wakahara, A ^{[1
]}

Yoshida, A ^{[1
]}

机构：

[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 220卷 / 03期

关键词：

InN; MgAl2O4 (111) substrate; group-III nitride;

D O I：

10.1016/S0022-0248(00)00547-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial InN layers were deposited on MgAl2O4 (1 1 1) substrates by microwave-excited metalorganic vapor-phase epitaxy. The crystallographic orientation relationships between the InN layer and MgAl2O4 (1 1 1) were InN (0 0 . 1)\\MgAl2O4 (1 1 1) and InN [1 1 . 0]\\MgAl2O4 [1 0 0]. The full-width at half-maximum of the X-ray rocking curve of 97 arcsec was obtained on MgAl2O4 (1 1 1). (C) 2000 Published by Elsevier Science B.V.

引用

页码：185 / 190

页数：6

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