High cooling power density SiGe/Si micro-coolers

被引：47

作者：

Fan, X ^{[1
]}

Zeng, G

Croke, E

LaBounty, C

Ahn, CC

Vashaee, D

Shakouri, A

Bowers, JE

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] LLC, HRL Labs, Malibu, CA 90265 USA

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 02期

关键词：

Cooling - Microelectronics - Optoelectronic devices - Semiconducting silicon - Semiconducting silicon compounds - Semiconductor superlattices - Temperature control;

D O I：

10.1049/el:20010096

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SiGe/Si superlattice micro-coolers are investigated experimentally. They can be monolithically integrated with Si-based microelectronic: devices to achieve localised cooling and temperature control. Cooling by as much as 4.2 K at 25 degreesC and 12K at 200 degreesC was measured on 3 mum thick, 60 x 60 mum(2) devices. This corresponds to maximum cooling power densities approaching kW/cm(2).

引用

页码：126 / 127

页数：2

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