Electron-hole diagrams versus exciton diagrams: the simplest problem on interacting excitons

被引:10
作者
Betbeder-Matibet, O
Combescot, M
机构
[1] Univ Denis Diderot, GPS, F-75251 Paris 05, France
[2] Univ Paris 06, CNRS, F-75251 Paris, France
关键词
D O I
10.1007/PL00011131
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We study the interaction of an exciton with a distant metal, which is the simplest problem on interacting excitons: The semiconductor and metal electrons being "different" species, we do not have to worry about the tricky consequences of Pauli exclusion between identical carriers, which appear in any other problem on interacting excitons. We show ho,;A, the exciton absorption, in the presence of semiconductor-metal interaction, can be derived in a very simple and transparent way from an exciton diagram procedure, provided that we use the appropriate exciton-metal interaction vertex, which contains the scattering from an exciton state to another exciton state under a Coulomb excitation. We also show that the resolution of this problem using standard electron-hole diagrams is dreadfully complicated at the lowest order in the semiconductor-metal interaction already, preventing a full calculation of the exciton-metal coupling from this usual technique.
引用
收藏
页码:17 / 29
页数:13
相关论文
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