Macropore formation in anodized p-type silicon

被引：6

作者：

Harada, H

Shirahashi, T

Nakamura, M

Ohwada, T

Sasaki, Y

Okuda, S

Hosono, A

机构：

[1] Shimane Univ, Fac Sci & Engn, Matsue, Shimane 6908504, Japan

[2] Mitsubishi Electr Corp, Adv Technol R&D Ctr, Amagasaki, Hyogo 6618661, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2001年 / 40卷 / 08期

关键词：

anodization; macropore; needle; porous silicon;

D O I：

10.1143/JJAP.40.4862

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The morphology of anodized p-type Si with the native oxide formed between the back surface of Si and the back metal was studied. Anodization of p-type Si having a 4.2 Angstrom native oxide laver resulted in the formation of approximately rectangular parallelepiped macropores with pore size of 1-3 mum followed by needlelike structures with diameter of 1.7 mum and finally the mirror surface. with an increase of the current density.

引用

页码：4862 / 4863

页数：2

共 4 条

[1]

Harada T, 2000, IEICE T COMMUN, VE83B, P577

[2] The physics of macropore formation in low-doped p-type silicon [J].