InP/InGaAs/InP Double Heterojunction Bipolar Transistors with 300 GHz Fmax

被引：8

作者：

Krishnan, S ^{[1
]}

Dahlstrom, M ^{[1
]}

Mathew, T ^{[1
]}

Wei, Y ^{[1
]}

Scott, D ^{[1
]}

Urteaga, M ^{[1
]}

Rodwell, MJW ^{[1
]}

Liu, WK ^{[1
]}

Lubyshev, D ^{[1
]}

Fang, XM ^{[1
]}

Wu, Y ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept ECE, Santa Barbara, CA 93106 USA

来源：

2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2001年

关键词：

D O I：

10.1109/ICIPRM.2001.929011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report InP/InGaAs/InP Double Heterojunction Transistors(DHBTs) with high breakdown voltages in a substrate transfer process. A device with a 400 Angstrom thick graded base, a 500 Angstrom chirped superlattice base-collector grade and a 2500 Angstrom thick InP collector exhibits f(tau) = 165 GHz and f(max) = 300 GHz with breakdown voltage BVCEO = 6V at a current density, J(e) = 1 . 10(5) A/cm(2). A device with a 400 Angstrom thick graded base, a 500 Angstrom chirped superlattice base-collector grade and a 1500 Angstrom thick InP collector exhibits f(tau) = 215 GHz and f(max) = 210 GHz with breakdown voltage BVCEO = 4V at a current density, J(e) = 1 . 10(5)A/cm(2).

引用

页码：31 / 34

页数：4