Redistribution of nitrogen implanted in the crystals of synthetic diamond

被引:1
作者
Cherepov, EI
Tishkovsky, EG
Obodnikov, VI
Pal'yanov, YN
Sokol, AG
Sobolev, NV
机构
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090 90, Russia
[2] Russian Acad Sci, Inst Mineral & Petrog, Siberian Branch, Novosibirsk 630090 90, Russia
关键词
diamond; implantation; nitrogen; annealing; impurity; diffusion;
D O I
10.1016/S0168-583X(01)00700-5
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The redistribution of nitrogen atoms implanted in synthetic diamond crystals was investigated by secondary ion mass-spectrometry in course of an isothermal annealing program at 1400 degreesC during 1, 5 and 20 h. It was shown that the nitrogen profiles spread at a macroscopic scale, and the broadening is well described in terms of the diffusion movement of impurity atoms. The preliminary estimates of diffusion coefficients were obtained: 2.3 x 10(-15) cm(2)/s for 1 h annealing, 8.5 x 10(-16) cm(2)/s for 5 h annealing and 3.7 x 10(-16) cm(2)/s for 20 h annealing. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:301 / 304
页数:4
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