Modeling excitation-dependent bandstructure effects on InGaN light-emitting diode efficiency

被引：16

作者：

Chow, Weng W. ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

OPTICS EXPRESS | 2011年 / 19卷 / 22期

关键词：

QUANTUM EFFICIENCY; GAN; GAIN; ALN;

D O I：

10.1364/OE.19.021818

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Bandstructure properties in wurtzite quantum wells can change appreciably with changing carrier density because of screening of quantum-confined Stark effect. An approach for incorporating these changes in an InGaN light-emitting-diode model is described. Bandstructure is computed for different carrier densities by solving Poisson and k.p equations in the envelop approximation. The information is used as input in a dynamical model for populations in momentum-resolved electron and hole states. Application of the approach is illustrated by modeling device internal quantum efficiency as a function of excitation. (C) 2011 Optical Society of America

引用

页码：21818 / 21831

页数：14

共 32 条

[1] Growth and applications of Group III nitrides [J].