Internal efficiency of InGaN light-emitting diodes: Beyond a quasiequilibrium model

被引：33

作者：

Chow, W. W. ^{[1
]}

Crawford, M. H. ^{[1
]}

Tsao, J. Y. ^{[1
]}

Kneissl, M. ^{[2
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

[2] Tech Univ Berlin, Inst Solid State Phys, D-10623 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 12期

关键词：

D O I：

10.1063/1.3490232

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose a model to better investigate InGaN light-emitting diode (LED) internal efficiency by extending beyond the usual total carrier density rate equation approach. To illustrate its capability, the model is applied to study intrinsic performance differences between violet and green LEDs. The simulations show performance differences, at different current densities and temperatures, arising from variations in spontaneous emission and heat loss rates. By tracking the momentum-resolved carrier populations, these rate changes are, in turn, traced to differences in bandstructure and plasma heating. The latter leads to carrier distributions that deviate from the quasiequilibrium ones at lattice temperature. (C) 2010 American Institute of Physics. [doi:10.1063/1.3490232]

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