Auger recombination in InGaN measured by photoluminescence

被引：936

作者：

Shen, Y. C. ^{[1
]}

Mueller, G. O. ^{[1
]}

Watanabe, S. ^{[1
]}

Gardner, N. F. ^{[1
]}

Munkholm, A. ^{[1
]}

Krames, M. R. ^{[1
]}

机构：

[1] Philips Lumileds Lighting Co, San Jose, CA 95131 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 14期

关键词：

D O I：

10.1063/1.2785135

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Auger recombination coefficient in quasi-bulk InxGa1-xN (x similar to 9%-15%) layers grown on GaN (0001) is measured by a photoluminescence technique. The samples vary in InN composition, thickness, and threading dislocation density. Throughout this sample set, the measured Auger coefficient ranges from 1.4x10(-30) to 2.0x10(-30) cm(6) s(-1). The authors argue that an Auger coefficient of this magnitude, combined with the high carrier densities reached in blue and green InGaN/GaN (0001) quantum well light-emitting diodes (LEDs), is the reason why the maximum external quantum efficiency in these devices is observed at very low current densities. Thus, Auger recombination is the primary nonradiative path for carriers at typical LED operating currents and is the reason behind the drop in efficiency with increasing current even under room-temperature (short-pulsed, low-duty-factor) injection conditions. (C) 2007 American Institute of Physics.

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