Low tunnel magnetoresistance dependence versus bias voltage in double barrier magnetic tunnel junction

被引：31

作者：

Colis, S ^{[1
]}

Gieres, G ^{[1
]}

Bär, L ^{[1
]}

Wecker, J ^{[1
]}

机构：

[1] Siemens AG, Corp Technol, D-91058 Erlangen, Germany

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 05期

关键词：

D O I：

10.1063/1.1597964

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the magnetic and transport properties of [IrMn8/CoFe1.5]/AlOx(1.2)/[CoFe1/NiFe5/CoFe1]/AlOx(1.2)/[CoFe1.5/IrMn8] (nanometer) double magnetic tunnel junctions (DMTJs) deposited by magnetron sputtering and patterned using optical lithography. The tunnel magnetoresistance (TMR) versus the bias voltage presents a symmetric characteristic, which indicates a good and similar quality of both AlOx barriers. The junctions show a resistance-area product about 35 kOmega mum(2), a high TMR at room temperature of 49.5%, and a high bias voltage at which the TMR signal is decreased to half of its maximum value, V-1/2(DMTJ)=1.33 V. Both hard magnetic layers are rigid in negative field up to 51.5 kA/m, while the coercive field of the soft layer is around 1.1 kA/m. The large difference of coercive fields, combined with the large TMR and V-1/2, makes these systems very promising for spin electronic devices. (C) 2003 American Institute of Physics.

引用

页码：948 / 950

页数：3

共 13 条

[1] CoFe/IrMn exchange biased top, bottom, and dual spin valves [J].