First-principles prediction of structure, energetics, formation enthalpy, elastic constants, polarization, and piezoelectric constants of AlN, GaN, and InN: Comparison of local and gradient-corrected density-functional theory

被引:414
作者
Zoroddu, A [1 ]
Bernardini, F
Ruggerone, P
Fiorentini, V
机构
[1] Univ Cagliari, INFM, I-09124 Cagliari, Italy
[2] Univ Cagliari, Dipartimento Fis, I-09124 Cagliari, Italy
[3] Tech Univ Munich, Walter Schottky Inst, D-8046 Garching, Germany
来源
PHYSICAL REVIEW B | 2001年 / 64卷 / 04期
关键词
D O I
10.1103/PhysRevB.64.045208
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A number of diverse bulk properties of the zinc-blende and wurtzite III-V nitrides AlN, GaN, and InN, are predicted from first principles within density-functional theory using the plane-wave ultrasoft pseudopotential method, within both the local density approximation (LDA) and generalized gradient approximation (GGA) to the exchange-correlation functional. Besides structure and cohesion. we study formation enthalpies (a key ingredient in predicting defect solubilities and surface stability), spontaneous polarizations and piezoelectric constants (central parameters for nanostructure modeling), and elastic constants. Our study bears out the relative merits of the two density-functional approaches in describing diverse properties of the III-V nitrides (and of the parent species N-2, Al, Ga, and In). None of the two schemes gives entirely successful results. However, the GGA associated with the multiprojector ultrasoft pseudopotential method slightly outperforms the LDA overall as to lattice parameters, cohesive energies. and formation enthalpies of wurtzite nitrides. This is relevant to the study of properties such as polarization, vibrational frequencies, elastic constants, nonstochiometric substitution, and absorption. A major exception is the formation enthalpy of InN, which is underestimated by the GGA (similar to0 vs -0.2 eV).
引用
收藏
页数:6
相关论文
共 38 条
  • [1] FP-LAPW and pseudopotential calculations of the structural phase transformations of GaN under high-pressure
    Abu-Jafar, M
    Al-Sharif, AI
    Qteish, A
    [J]. SOLID STATE COMMUNICATIONS, 2000, 116 (07) : 389 - 393
  • [2] Growth and applications of Group III nitrides
    Ambacher, O
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1998, 31 (20) : 2653 - 2710
  • [3] Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
    Ambacher, O
    Smart, J
    Shealy, JR
    Weimann, NG
    Chu, K
    Murphy, M
    Schaff, WJ
    Eastman, LF
    Dimitrov, R
    Wittmer, L
    Stutzmann, M
    Rieger, W
    Hilsenbeck, J
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) : 3222 - 3233
  • [4] Polarization-based calculation of the dielectric tensor of polar crystals
    Bernardini, F
    Fiorentini, V
    Vanderbilt, D
    [J]. PHYSICAL REVIEW LETTERS, 1997, 79 (20) : 3958 - 3961
  • [5] Spontaneous polarization and piezoelectric constants of III-V nitrides
    Bernardini, F
    Fiorentini, V
    Vanderbilt, D
    [J]. PHYSICAL REVIEW B, 1997, 56 (16): : 10024 - 10027
  • [6] Accurate calculation of polarization-related quantities in semiconductors
    Bernardini, F
    Fiorentini, V
    Vanderbilt, D
    [J]. PHYSICAL REVIEW B, 2001, 63 (19):
  • [7] BERNARDINI F, IN PRESS PHYS REV B
  • [8] AB-INITIO CALCULATIONS OF STRUCTURAL AND ELECTRONIC-PROPERTIES OF GALLIUM SOLID-STATE PHASES
    BERNASCONI, M
    CHIAROTTI, GL
    TOSATTI, E
    [J]. PHYSICAL REVIEW B, 1995, 52 (14): : 9988 - 9998
  • [9] BOSIN A, UNPUB
  • [10] BURNS G, 1985, SOLID STATE PHYS, P88