Positive magnetoresistance from quantum interference effects in perovskite-type manganites

被引：52

作者：

Chen, P ^{[1
]}

Xing, DY

Du, YW

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

来源：

PHYSICAL REVIEW B | 2001年 / 64卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.64.104402

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Positive magnetoresistance (MR) in La0.7Pb0.3MnO3 single crystals was observed between temperatures 4.2 and 50 K, in addition to the negative colossal magnetoresistance (CMR) at higher temperatures. The positive MR increases with temperature lowered and reaches 20% at T = 4.2 K in a magnetic field of H = 8 T. From temperature and field dependences of the resistivity, it follows that the positive MR at low temperatures arise from quantum interference effects (QIE). The QIE-induced MR observed in the CMR manganites indicates that the Coulomb interaction and disorder may play an important role in their transport proper-ties.

引用

页数：5

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