Fabrication of large number density platinum nanowire arrays by size reduction lithography and nanoimprint lithography

被引:66
作者
Yan, XM
Kwon, S
Contreras, AM
Bokor, J
Somorjai, GA [1 ]
机构
[1] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA
[2] Lawrence Berkeley Lab, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
[4] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
关键词
D O I
10.1021/nl050228q
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Large number density Pt nanowires with typical dimensions of 12 mu m x 20 nm x 5 nm (length x width x height) are fabricated on planar oxide supports. First sub-20 nm single crystalline silicon nanowires are fabricated by size reduction lithography, and then the Si nanowire pattern is replicated to produce a large number of lot nanowires by nanoimprint lithography. The width and height of the lot nanowires are uniform and are controlled with nanometer precision. The nanowire number density is 4 x 10(4) cm(-1), resulting in a Pt surface area larger than 2 cm(2) on a 5 x 5 cm(2) oxide substrate. Bimodal nanowires with different width have been generated by using a lot shadow deposition technique. Using this technique, alternating 10 and 19 nm wide nanowires are produced.
引用
收藏
页码:745 / 748
页数:4
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