New trends in atomic scale simulation of wet chemical etching of silicon with KOH

被引：28

作者：

Camon, H ^{[1
]}

Moktadir, Z ^{[1
]}

DjafariRouhani, M ^{[1
]}

机构：

[1] LPS,F-31055 TOULOUSE,FRANCE

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1996年 / 37卷 / 1-3期

关键词：

etching; silicon; surface roughness;

D O I：

10.1016/0921-5107(95)01473-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new atomic scale model has been developed to simulate anisotropic etching of silicon in KOH solutions. This model is based on the influence of the number of hydroxide groups attached to atoms. Etch rates and macroscopic activation energies have been calculated and compared with experimental data. Microscopic surface roughness has been investigated for <100> and <111> surface.

引用

页码：142 / 145

页数：4

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