Femtosecond studies of carrier dynamics in InGaN

被引：79

作者：

Sun, CK

Vallee, F

Keller, S

Bowers, JE

DenBaars, SP

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

[2] UNIV CALIF SANTA BARBARA,NSF,CTR QUANTIZED ELECT STRUCT,SANTA BARBARA,CA 93106

[3] ECOLE POLYTECH,CNRS,OPT QUANT LAB,F-91128 PALAISEAU,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 15期

关键词：

D O I：

10.1063/1.118803

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultrafast carrier dynamics in In0.16Ga0.84N were investigated using femtosecond transient transmission measurements. We observed a fast initial carrier cooling on a time scale of 500 fs followed by a slow relaxation process which persisted longer than 5 ps due to a hot phonon effect. Band gap renormalization induced transient absorption was observed using a probe photon energy 300 meV above the band edge, These results were compared to a model based on the numerical resolution of the carrier Boltzmann equations. (C) 1997 American Institute of Physics.

引用

页码：2004 / 2006

页数：3

共 11 条

[1]

CHOW WW, 1996, UNPUB C LAS EL CLEO

[2] PICOSECOND LUMINESCENCE MEASUREMENTS OF HOT CARRIER RELAXATION IN III-V SEMICONDUCTORS USING SUM FREQUENCY GENERATION [J].