Emission properties of an amorphous AlN:Cr3+ thin-film phosphor

被引：41

作者：

Caldwell, ML ^{[1
]}

Martin, AL

Dimitrova, VI

Van Patten, PG

Kordesch, ME

Richardson, HH

机构：

[1] Ohio Univ, Condensed Matter & Surface Sci Program, Athens, OH 45701 USA

[2] Ohio Univ, Dept Chem & Biochem, Clippinger Labs, Athens, OH 45701 USA

[3] Univ Rousse, Dept Phys, Rousse 7017, Bulgaria

[4] Ohio Univ, Dept Phys, Clippinger Labs, Athens, OH 45701 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 09期

关键词：

D O I：

10.1063/1.1351531

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Chromium-doped aluminum nitride (AlN:Cr) films were grown on p-doped silicon (111) by rf magnetron sputtering in a nitrogen atmosphere at a pressure of 10(-4) Torr. Film thickness was typically 200 nm. After growth, the films were "activated" at similar to 1300 K for 30 min in a nitrogen atmosphere. Films activated in this manner exhibit intense cathodoluminescence and photoluminescence emission. Spectral evidence demonstrates conclusively that the luminescent centers are Cr3+ ions. (C) 2001 American Institute of Physics.

引用

页码：1246 / 1248

页数：3

共 17 条

[1] Display applications of rare-earth-doped materials [J].

Ballato, J ;

Lewis, JS ;

Holloway, P .

MRS BULLETIN, 1999, 24 (09) :51-56

[2] Red light emission by photoluminescence and electroluminescence from Pr-doped GaN on Si substrates [J].

Birkhahn, R ;

Garter, M ;

Steckl, AJ .

APPLIED PHYSICS LETTERS, 1999, 74 (15) :2161-2163

[3]

CALDWELL ML, 1999, MRS INTERNET J N S R, P1

[4]

Chen L.C, 1998, SOLID STATE PHYS

[5]

DEMAS JN, 1983, EXCITED STATE LIFETI, P32

[6] Visible emission from electroluminescent devices using an amorphous AlN:Er3+ thin-film phosphor [J].

Dimitrova, VI ;

Van Patten, PG ;

Richardson, HH ;

Kordesch, ME .

APPLIED PHYSICS LETTERS, 2000, 77 (04) :478-479

[7] Visible cathodoluminescence of Er-doped amorphous AlN thin films [J].

Gurumurugan, K ;

Chen, H ;

Harp, GR ;

Jadwisienczak, WM ;

Lozykowski, HJ .

APPLIED PHYSICS LETTERS, 1999, 74 (20) :3008-3010

[8] Trap-mediated excitation of Er3+ photoluminescence in Er-implanted GaN [J].

Kim, S ;

Rhee, SJ ;

Turnbull, DA ;

Li, X ;

Coleman, JJ ;

Bishop, SG ;

Klein, PB .

APPLIED PHYSICS LETTERS, 1997, 71 (18) :2662-2664

[9] Voltage-controlled yellow or orange emission from GaN codoped with Er and Eu [J].

Lee, DS ;

Heikenfeld, J ;

Birkhahn, R ;

Garter, M ;

Lee, BK ;

Steckl, AJ .

APPLIED PHYSICS LETTERS, 2000, 76 (12) :1525-1527

[10] Visible cathodoluminescence of GaN doped with Dy, Er, and Tm [J].

Lozykowski, HJ ;

Jadwisienczak, WM ;

Brown, I .

APPLIED PHYSICS LETTERS, 1999, 74 (08) :1129-1131

← 1 2 →