Ferroelectric properties of BaMgF4 films grown on Si(100), (111), and Pt(111)/SiO2/Si(100) structures

Ferroelectric properties of BaMgF4 (BMF) films grown on Si(100), (111) and Pt(111)/SiO2/Si(100) structures were studied. No ferroelectric polarization along the surface normal was observed for (011)-oriented BMF films grown on Si(100) substrates, while (120)-oriented BMF films grown on Si(111) and Pt(111)/SiO2/Si(100) structures clearly showed hysteresis characteristics with ferroelectric polarization. The remanent polarization values of the BMF films on Si(111) and Pt(111)/SiO2/Si(100) structures were 0.89 mu C/cm(2) and 5.0 mu C/cm(2), respectively. Fabrication and characterization of metal-ferroelectric-semiconductor (MFS) field effect transistors (FETs) using Si(111) substrates were attempted. It was observed that the threshold voltage of the fabricated MFS FETs was shifted upon applying a gate voltage.