High Quantum Efficiency of Band-Edge Emission from ZnO Nanowires

被引:87
作者
Gargas, Daniel J. [1 ]
Gao, Hanwei [1 ]
Wang, Hungta [1 ]
Yang, Peidong [1 ,2 ]
机构
[1] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
关键词
Zinc oxide; nanowire; quantum efficiency; photoluminescence; extraction; power dependent;
D O I
10.1021/nl201850k
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
External quantum efficiency (EQE) of photoluminescence as high as 20% from isolated ZnO nanowires were measured at room temperature. The EQE was found to be highly dependent on photoexcitation density, which underscores the importance of uniform optical excitation during the EQE measurement. An integrating sphere coupled to a microscopic imaging system was used in this work, which enabled the EQE measurement on isolated ZnO nanowires. The EQE values obtained here are significantly higher than those reported for ZnO materials in forms of bulk, thin films or powders. Additional insight on the radiative extraction factor of one-dimensional nanostructures was gained by measuring the internal quantum efficiency of individual nanowires. Such quantitative EQE measurements provide a sensitive, noninvasive method to characterize the optical properties of low-dimensional nanostructures and allow tuning of synthesis parameters for optimization of nanoscale materials.
引用
收藏
页码:3792 / 3796
页数:5
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