Improving thermoelectric properties of n-type bismuth-telluride-based alloys by deformation-induced lattice defects and texture enhancement

被引:152
作者
Hu, L. P. [1 ]
Liu, X. H. [1 ]
Xie, H. H. [1 ]
Shen, J. J. [1 ]
Zhu, T. J. [1 ,2 ]
Zhao, X. B. [1 ]
机构
[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
[2] Zhejiang Univ, Cyrus Tang Ctr Sensor Mat & Applicat, Hangzhou 310027, Zhejiang, Peoples R China
基金
中国国家自然科学基金;
关键词
Bismuth tellurides; Thermoelectric materials; Hot deformation; Texture; Donor-like effect; FIGURE-OF-MERIT; ELECTRICAL-PROPERTIES; BI2TE3; CRYSTALS; DOPED SB2TE3; PERFORMANCE; PHASE;
D O I
10.1016/j.actamat.2012.05.008
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Repetitive hot deformation has been demonstrated as a new approach to obtain high-performance n-type bismuth-telluride-based alloys, benefiting from the deformation-induced lattice defects and texture enhancement. X-ray diffraction measurement showed that the oriented textures were greatly enhanced after repetitive hot deformation of the alloys with a quasi-layered crystal structure. The electrical conductivity was remarkably improved by the deformation-induced donor-like defect and texture enhancement, while the Seebeck coefficient remained almost unchanged, and consequently the room temperature power factor was significantly increased from 1.3 W m(-1) K-2, before hot deformation, to 2.9W m(-1) K-2 after four hot deformations. The in-plane lattice thermal conductivity was also largely reduced by the generated high-density lattice defects during the hot-deformation process. The maximum ZT value for the repetitively hot-deformed samples reached 1.0 at 513 K, suggesting that the simple new top-down method is very promising for large-scale production of high-performance bismuth-telluride-based polycrystalline bulk materials. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:4431 / 4437
页数:7
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