Pattern-dependent copper microcorrosion from CMP

被引：22

作者：

Chen, KW ^{[1
]}

Wang, YL

Chang, L

Chang, SC

Li, FY

Lin, SH

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

[2] Natl Chinan Univ, Dept Elect Engn, Nantou, Taiwan

[3] Natl Chinan Univ, Dept Appl Chem, Nantou, Taiwan

[4] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 70101, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2004年 / 7卷 / 10期

关键词：

D O I：

10.1149/1.1795632

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

After chemical mechanical planarization (CMP) processes, copper microcorrosion was found in a specific pattern, which consisted of two sides of small trench islands connected by a long underlayer metal line. The depth of the copper recess was strongly dependent on the length of the underlayer metal line as well as the size of the trench islands. This phenomenon was different from typical photocorrosion; it was suggested to be induced by the additional electrochemical potential from the connection of the trench islands. Auger analysis proves that higher copper oxidation rate occurred on the specific pattern compared to those without connection. In addition, the pattern-dependent microcorrosion was identified by blocking the connection of the trench islands. A proposed model was given to account for the enhanced copper corrosion from the specific patterns during CMP. (C) 2004 The Electrochemical Society.

引用

页码：G238 / G239

页数：2

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