Roles of the first atomic layers in growth of SrTiO3 films on LaAlO3 substrates

被引:54
作者
Kim, DW [1 ]
Kim, DH
Kang, BS
Noh, TW
Lee, DR
Lee, KB
机构
[1] Seoul Natl Univ, Dept Phys, Seoul 151742, South Korea
[2] Seoul Natl Univ, Condensed Matter Res Inst, Seoul 151742, South Korea
[3] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea
关键词
D O I
10.1063/1.123792
中图分类号
O59 [应用物理学];
学科分类号
摘要
Growth behaviors of SrTiO3/LaAlO3 films could be varied substantially by controlling terminating atomic layers of the substrates. In a film on the LaO-terminated substrate, strain-induced roughening was observed. In a film on the AlO2-terminated substrate, the first atomic layer of the interface seemed to have lots of defects. However, the stress became quickly relaxed, so a SrTiO3 film could be grown in a layer-by-layer mode after a few monolayers. All these observations could be explained in terms of chemical matching between the atomic layers at the interface. (C) 1999 American Institute of Physics. [S0003-6951(99)01715-5].
引用
收藏
页码:2176 / 2178
页数:3
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