Determination of thicknesses and interface roughnesses of GaAs-based and InAs/AlSb-based heterostructures by X-ray reflectometry

被引：13

作者：

Durand, O ^{[1
]}

Berger, V ^{[1
]}

Bisaro, R ^{[1
]}

Bouchier, A ^{[1
]}

De Rossi, A ^{[1
]}

Marcadet, X ^{[1
]}

Prévot, I ^{[1
]}

机构：

[1] Thales, Cent Rech Lab, F-91404 Orsay, France

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2001年 / 4卷 / 1-3期

关键词：

X-ray reflectometry; AlGaAs waveguide; InAs/AlSb heterostructures; thickness and roughness determination;

D O I：

10.1016/S1369-8001(00)00103-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the X-ray reflectometry technique as a unique tool for the assessment of individual layer thicknesses inside complicated structure stacking of semi-conductors heterostructures. In particular, the use of an inverse fast Fourier transform applied to the reflectivity curve allows the fast determination of the layer thicknesses and the use of a simulation allows the determination of both interfacial roughnesses and individual layer thicknesses. We demonstrate the capability of this method by reporting X-ray reflectometry study on a never AlGaAs-based waveguide with complicated structure stacking and on InAs/AlSb-based superlattices. Typical layer thicknesses from 0.5 to 500 nm were successfully investigated. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：327 / 330

页数：4

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