In-situ nanoindentation of epitaxial TiN/MgO (001) in a transmission electron microscope

被引：28

作者：

Minor, AM ^{[1
]}

Stach, EA

Morris, JW

Petrov, I

机构：

[1] Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA

[2] Lawrence Berkeley Natl Lab, Natl Ctr Electron Microscopy, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[4] Univ Illinois, Dept Mat Sci, Urbana, IL 61801 USA

[5] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2003年 / 32卷 / 10期

关键词：

nanoindentation; in situ; transmission electron microscopy; epitaxial film; plasticity; dislocation;

D O I：

10.1007/s11664-003-0084-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The deformation behavior of the epitaxial TiN/MgO (001) thin film/substrate system was studied through in-situ nanoindentation in a transmission electron microscope (TEM). The required sample geometry was prepared using Ga+ focused ion beam (FIB) etching. During room-temperature indentation, both the TiN film and the MgO substrate deformed through the motion of dislocations. The result was a localized hemispherical plastic zone in the TiN film directly under the indentation contact area, forming an 8degrees tilt boundary. These results show directly that small-scale plasticity in TiN can occur at room temperature through the motion of dislocations.

引用

页码：1023 / 1027

页数：5

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