Giant magnetoresistance and its sensor applications

被引：25

作者：

Inomata, K ^{[1
]}

机构：

[1] Toshiba Corp, Adv Res Lab, Kawasaki, Kanagawa 210, Japan

来源：

JOURNAL OF ELECTROCERAMICS | 1998年 / 2卷 / 04期

关键词：

giant magnetoresistance; tunnel magnetoresistance; HDD; heads;

D O I：

10.1023/A:1009930724459

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Current status is addressed for spin polarized transport such as spin-dependent scattering and spin-dependent tunneling in artificial structured magnetic thin films. The main points discussed include the physical origin of the giant magnetoresistance (GMR) and various GMR materials. The applications of the GMR to magnetic sensors such as read heads for ultra high density magnetic recording are also discussed.

引用

页码：283 / 293

页数：11

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