Polycrystalline thin films of antimony selenide via chemical bath deposition and post deposition treatments

被引:78
作者
Rodríguez-Lazcano, Y [1 ]
Peña, Y [1 ]
Nair, MTS [1 ]
Nair, PK [1 ]
机构
[1] Univ Nacl Autonoma Mexico, Dept Solar Energy Mat, Ctr Invest Energia, Temixco 62580, Morelos, Mexico
关键词
X-ray diffraction; chemical deposition; antimony selenide; photoconductivity;
D O I
10.1016/j.tsf.2005.07.238
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report a method for obtaining thin films of polycrystalline antimony selenide via chemical bath deposition followed by heating the thin films at 573 K in selenium vapor. The thin films deposited from chemical baths containing one or more soluble complexes of antimony, and selenosulfate initially did not show X-ray diffraction (XRD) patterns corresponding to crystalline antimony selenide. Composition of the films, studied by energy dispersive X-ray analyses indicated selenium deficiency. Heating these films in presence of selenium vapor at 573 K under nitrogen (2000 mTorr) resulted in an enrichment of Se in the films. XRD peaks of such films matched Sb(2)Se(3). Evaluation of band gap from optical spectra of such films shows absorption due to indirect transition occurring in the range of 1-1.2 eV. The films are photosensitive, with dark conductivity of about 2 x 10(-8) (Omega cm)(-1) and photoconductivity, about 10(-6) (Omega cm)(-1) under tungsten halogen lamp illumination with intensity of 700 W m(-2). An estimate for the mobility life time product for the film is 4 x 10(-9) cm(2) V(-1) . (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:77 / 82
页数:6
相关论文
共 12 条
[1]   A PHOTO-ELECTROCHEMICAL CELL BASED ON CHEMICALLY DEPOSITED SB2SE3 THIN-FILM ELECTRODE AND DEPENDENCE OF DEPOSITION ON VARIOUS PARAMETERS [J].
BHATTACHARYA, RN ;
PRAMANIK, P .
SOLAR ENERGY MATERIALS, 1982, 6 (03) :317-322
[2]   OPTICAL-PROPERTIES OF SB2SE3 THIN-FILMS [J].
ELSHAIR, HT ;
IBRAHIM, AM ;
ELWAHABB, EA ;
AFIFY, MA ;
ELSALAM, FA .
VACUUM, 1991, 42 (14) :911-914
[3]   Chemical deposition of bismuth selenide thin films using N,N-dimethylselenourea [J].
Garcia, VM ;
Nair, MTS ;
Nair, PK ;
Zingaro, RA .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (05) :645-653
[4]  
*INT CTR DIFFR DAT, POWD DIFFR FIL JOINT
[5]  
Madelung O., 1992, DATA SCI TECHNOLOGY, P50
[6]   Chemical deposition method for metal chalcogenide thin films [J].
Mane, RS ;
Lokhande, CD .
MATERIALS CHEMISTRY AND PHYSICS, 2000, 65 (01) :1-31
[7]  
MOSKOVITS M, 1990, P INT SCH PHYS, V107, P397
[8]   Semiconductor thin films by chemical bath deposition for solar energy related applications [J].
Nair, PK ;
Nair, MTS ;
Garcia, VM ;
Arenas, OL ;
Pena, Y ;
Castillo, A ;
Ayala, IT ;
Gomezdaza, O ;
Sanchez, A ;
Campos, J ;
Hu, H ;
Suarez, R ;
Rincon, ME .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1998, 52 (3-4) :313-344
[9]   CHEMICAL METHODS FOR THE DEPOSITION OF THIN-FILMS OF SB2SE3 [J].
PRAMANIK, P ;
BHATTACHARYA, RN .
JOURNAL OF SOLID STATE CHEMISTRY, 1982, 44 (03) :425-425
[10]   Effect of Se source on properties of spray deposited Sb2Se3 thin films [J].
Rajpure, KY ;
Bhosale, CH .
MATERIALS CHEMISTRY AND PHYSICS, 2000, 62 (02) :169-174