A simple large-scale synthesis of coaxial nanocables: silicon carbide sheathed with silicon oxide

被引:20
作者
Liu, DF [1 ]
Xie, SS [1 ]
Yan, XQ [1 ]
Ci, LJ [1 ]
Shen, F [1 ]
Wang, JX [1 ]
Zhou, ZP [1 ]
Yuan, HJ [1 ]
Gao, Y [1 ]
Song, L [1 ]
Liu, LF [1 ]
Zhou, WY [1 ]
Wang, G [1 ]
机构
[1] Chinese Acad Sci, Inst Phys, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1016/S0009-2614(03)00837-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We reported a simple method to synthesize coaxial nanocables with silicon carbide core and amorphous silicon oxide sheath just by exposure of Au-coated silicon substrates to carbon monoxide at 1100 degreesC. The as-grown product was characterized by scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray spectroscopy, and micro-Raman spectroscopy. The obtained nanocables were in large scale, several tens of micrometers long, with the core a few nanometers to ten or more nanometers in diameter. The vapor-liquid-solid mechanism was proposed to elucidate the growth process. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:269 / 272
页数:4
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