Synthesizing boron nitride nanotubes filled with SiC nanowires by using carbon nanotubes as templates

被引:89
作者
Han, WQ [1 ]
Redlich, P [1 ]
Ernst, F [1 ]
Rühle, M [1 ]
机构
[1] Max Planck Inst Met Forsch, D-70174 Stuttgart, Germany
关键词
D O I
10.1063/1.124857
中图分类号
O59 [应用物理学];
学科分类号
摘要
A method is described to synthesize silicon carbide (SiC)-filled boron nitride (BN) nanotubes (NT) simultaneously in high yield by using carbon nanotubes (CNTs) as templates. This method combines both carbon nanotube-substitution reaction and confined reaction. Through the CNT-substitution reaction, CNTs react with boron oxide vapor in the presence of nitrogen gas to form BN NTs, whose diameters and lengths are similar to those of the starting CNTs. The formation of the SiC filling is proceeded by the penetration of SiO vapor into the cavity of the nanotubes and subsequent reaction of SiO vapor with the inner carbon layers or volatile carbon mono-oxide in the interior to form SiC nanowires. The filled length can be up to the entire length of the nanotubes. SiC-filled (BN)(x)C-y nanotubes also form in the product. (C) 1999 American Institute of Physics. [S0003-6951(99)05139-6].
引用
收藏
页码:1875 / 1877
页数:3
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