Silicon anisotropic etching in alkaline solutions I. The geometric description of figures developed under etching Si(100) in various solutions

被引：79

作者：

Zubel, I ^{[1
]}

Barycka, I ^{[1
]}

机构：

[1] Wroclaw Univ Technol, Inst Microsyst Technol, PL-53370 Wroclaw, Poland

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1998年 / 70卷 / 03期

关键词：

monocrystalline silicon; anisotropic etching; computer simulation;

D O I：

10.1016/S0924-4247(98)00141-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of alkaline solution concentration, type of cation (K+ or Na+ ) and TPA additive on etching rate of various crystallographic planes and shape of etched figures were examined. The simulation of the etching course for concave and convex figures was proposed. The results of the simulation were compared with SEM images. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：250 / 259

页数：10

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