Monitoring of atomic layer deposition by incremental dielectric reflection

被引：32

作者：

Rosental, A

Adamson, P

Gerst, A

Niilisk, A

机构：

[1] Institute of Physics, EE-2400 Tartu

来源：

APPLIED SURFACE SCIENCE | 1996年 / 107卷

关键词：

D O I：

10.1016/S0169-4332(96)00483-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

An optical method for in situ diagnostics of atomic layer deposition, hosed on the measuring of the reflectivity of a F-polarized light in fully transparent systems, is proposed and analyzed by using a classical four-phase approximation. The method is applied to the monitoring of TiO2 growth. It is shown;hot the sensitivity of the method is high if one uses the angles of incidence close to the Brewster angle of the substrate. The method is called incremental dielectric reflection.

引用

页码：178 / 183

页数：6

共 11 条

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