REAL-TIME OPTICAL DIAGNOSTICS FOR MEASURING AND CONTROLLING EPITAXIAL-GROWTH

被引：11

作者：

ASPNES, DE

KAMIYA, I

TANAKA, H

BHAT, R

FLOREZ, LT

HARBISON, JP

QUINN, WE

TAMARGO, M

GREGORY, S

PUDENZI, MAA

SCHWARZ, SA

BRASIL, MJSP

NAHORY, RE

机构：

[1] UNIV ILLINOIS, DEPT PHYS, URBANA, IL 61801 USA

[2] BANDGAP ENGN, BROOMFIELD, CO 80021 USA

[3] UNICAMP, IFGW, BR-13081 CAMPINAS, SP, BRAZIL

[4] FUJITSU LABS LTD, ATSUGI 24301, JAPAN

来源：

THIN SOLID FILMS | 1993年 / 225卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(93)90121-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We summarize recent applications of two real-time optical diagnostic techniques, reflectance difference spectroscopy (RDS) and spectroellipsometry (SE), to epitaxial growth on GaAs and atomic layer epitaxy (ALE) in particular. Using RDS, we obtain the first real-time spectroscopic data of the evolution of the (001) GaAs surface to cyclic and non-cycle exposures of atmospheric pressure H-2, H-2 and trimethylgallium, and H-2 and arsine, which simulate growth by ALE. None of our observations is consistent with any previously proposed simple model, emphasizing the necessity of real-time measurements for the analysis of complex surface reactions. Using SE we have constructed a closed-loop system for controlling the compositions of AlxGa1-x As layers grown by chemical beam epitaxy. We have produced various graded-compositional structures, including parabolic quantum wells 200 angstrom wide where the composition was controlled by analysis of the running outermost 3 angstrom (about 1 monolayer) of depositing material.

引用

页码：26 / 31

页数：6

共 30 条

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