ATOMIC LAYER EPITAXY ON (001) GAAS - REAL-TIME SPECTROSCOPY

被引：42

作者：

ASPNES, DE

KAMIYA, I

TANAKA, H

BHAT, R

机构：

[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

[2] FUJITSU LABS LTD,ATSUGI 24301,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 04期

关键词：

D O I：

10.1116/1.586230

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using reflectance-difference spectroscopy, we perform the first real-time spectroscopic investigation of the evolution of the (001) GaAs surface to cyclic and noncyclic exposures to atmospheric pressure H-2, H-2 and trimethylgallium, and H-2 and AsH3 that simulate growth by atomic layer epitaxy. None of our observations are consistent with any previously proposed simple model. The results emphasize the necessity of real-time measurements for the analysis of complex surface reactions.

引用

页码：1725 / 1729

页数：5

共 26 条

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