ATOMIC LAYER EPITAXY ON (001) GAAS - REAL-TIME SPECTROSCOPY

被引：42

作者：

ASPNES, DE

KAMIYA, I

TANAKA, H

BHAT, R

机构：

[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

[2] FUJITSU LABS LTD,ATSUGI 24301,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 04期

关键词：

D O I：

10.1116/1.586230

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using reflectance-difference spectroscopy, we perform the first real-time spectroscopic investigation of the evolution of the (001) GaAs surface to cyclic and noncyclic exposures to atmospheric pressure H-2, H-2 and trimethylgallium, and H-2 and AsH3 that simulate growth by atomic layer epitaxy. None of our observations are consistent with any previously proposed simple model. The results emphasize the necessity of real-time measurements for the analysis of complex surface reactions.

引用

页码：1725 / 1729

页数：5

共 26 条

[11] CHEMISORPTION AND DECOMPOSITION OF TRIMETHYLGALLIUM ON GAAS(100)
CREIGHTON, JR
[J]. SURFACE SCIENCE, 1990, 234 (03) : 287 - 307
[12] SURFACE STOICHIOMETRY VARIATION ASSOCIATED WITH GAAS (001) RECONSTRUCTION TRANSITIONS
DEPARIS, C
MASSIES, J
[J]. JOURNAL OF CRYSTAL GROWTH, 1991, 108 (1-2) : 157 - 172
[13] MOLECULAR-BEAM EPITAXY GROWTH MECHANISMS ON GAAS(100) SURFACES
FARRELL, HH
HARBISON, JP
PETERSON, LD
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05): : 1482 - 1489
[14] ATOMIC LAYER EPITAXY
GOODMAN, CHL
PESSA, MV
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) : R65 - R81
[15] SURFACE SCIENCE AT ATMOSPHERIC-PRESSURE - RECONSTRUCTIONS ON (001) GAAS IN ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION
KAMIYA, I
ASPNES, DE
TANAKA, H
FLOREZ, LT
HARBISON, JP
BHAT, R
[J]. PHYSICAL REVIEW LETTERS, 1992, 68 (05) : 627 - 630
[16] ARSENIC DIMERS AND MULTILAYERS ON (001)GAAS SURFACES IN ATMOSPHERIC-PRESSURE ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION
KAMIYA, I
TANAKA, H
ASPNES, DE
FLOREZ, LT
COLAS, E
HARBISON, JP
BHAT, R
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (10) : 1238 - 1240
[17] PYROLYSIS OF TRIMETHYLGALLIUM ON (001) GAAS SURFACE INVESTIGATED BY SURFACE PHOTOABSORPTION
KOBAYASHI, N
HORIKOSHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (3A): : L319 - L321
[18] CARS INSITU DIAGNOSTICS IN MOVPE - THE THERMAL-DECOMPOSITION OF ASH3 AND PH3
LUCKERATH, R
TOMMACK, P
HERTLING, A
KOSS, HJ
BALK, P
JENSEN, KF
RICHTER, W
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 151 - 158
[19] REFLECTANCE-DIFFERENCE SPECTROSCOPY STUDY OF SURFACE-REACTIONS IN ATOMIC LAYER EPITAXY OF GAAS USING TRIMETHYLGALLIUM AND TERTIARYBUTYLARSINE
MAA, BY
DAPKUS, PD
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (20) : 2261 - 2263
[20] MAA BY, 1991, MATER RES SOC SYMP P, V222, P25, DOI 10.1557/PROC-222-25

← 1 2 3 →