ARSENIC DIMERS AND MULTILAYERS ON (001)GAAS SURFACES IN ATMOSPHERIC-PRESSURE ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION

被引：61

作者：

KAMIYA, I ^{[1
]}

TANAKA, H ^{[1
]}

ASPNES, DE ^{[1
]}

FLOREZ, LT ^{[1
]}

COLAS, E ^{[1
]}

HARBISON, JP ^{[1
]}

BHAT, R ^{[1
]}

机构：

[1] BELLCORE,RED BANK,NJ 07701

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 10期

关键词：

D O I：

10.1063/1.107417

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Arsenic dimers and multilayers are shown to exist on (001)GaAs surfaces under atmospheric pressure (AP) organometallic chemical vapor deposition (OMCVD) conditions. We obtained reflectance-difference spectra from surfaces in AP H-2 that are equivalent to those obtained from the (2 X 4) and disordered-c(4 X 4) reconstructions prepared in ultrahigh vacuum by molecular beam epitaxy. Implications for models of OMCVD growth are discussed.

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页码：1238 / 1240

页数：3

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