Materials design of transparent and half-metallic ferromagnets in V- or Cr-doped ZnS, ZnSe and ZnTe without P- or N-type doping treatment

被引:80
作者
Sato, K [1 ]
Katayama-Yoshida, H [1 ]
机构
[1] Osaka Univ, Inst Sci & Ind Res, Dept Condensed Matter Phys, Osaka 5670047, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2001年 / 40卷 / 7A期
关键词
ab initio calculation; II-VI compound semiconductors; diluted magnetic semiconductor; materials design; semiconductor spintronics; spin-glass;
D O I
10.1143/JJAP.40.L651
中图分类号
O59 [应用物理学];
学科分类号
摘要
We propose materials design to fabricate the transparent and half-metallic ferromagnets in V or Cr-doped ZnS, ZnSe and ZnTe based upon ab initio electronic structure calculation with the local-spin-density-functional approximation. The electronic structure and the magnetic properties of 3d-transition-metal-atom-doped II-VI compound semiconductors of ZnS, ZnSe and ZnTe are systematically calculated using the Korringa-Kohn-Rostoker method with taking into account the substitutional disorder by the coherent potential approximation. It is shown that V or Cr-doped ZnS, ZnSe and ZnTe are ferromagnetic without p- or n-type doping treatment, however, Mn-, Fe-, Co- or Ni-doped ZnS, ZnSe and ZnTe are the spin-glass states.
引用
收藏
页码:L651 / L653
页数:3
相关论文
共 15 条
[2]   Ferromagnetism and its stability in the diluted magnetic semiconductor (In,Mn)As [J].
Akai, H .
PHYSICAL REVIEW LETTERS, 1998, 81 (14) :3002-3005
[3]   Carrier-induced ferromagnetic interactions in p-doped Zn(1-x)MnxTe epilayers [J].
Ferrand, D ;
Cibert, J ;
Bourgognon, C ;
Tatarenko, S ;
Wasiela, A ;
Fishman, G ;
Bonanni, A ;
Sitter, H ;
Kolesnik, S ;
Jaroszyski, J ;
Barcz, A ;
Dietl, T .
JOURNAL OF CRYSTAL GROWTH, 2000, 214 :387-390
[4]   Injection and detection of a spin-polarized current in a light-emitting diode [J].
Fiederling, R ;
Keim, M ;
Reuscher, G ;
Ossau, W ;
Schmidt, G ;
Waag, A ;
Molenkamp, LW .
NATURE, 1999, 402 (6763) :787-790
[5]   DILUTED MAGNETIC SEMICONDUCTORS [J].
FURDYNA, JK .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) :R29-R64
[6]   Observation of a ferromagnetic transition induced by two-dimensional hole gas in modulation-doped CdMnTe quantum wells [J].
Haury, A ;
Wasiela, A ;
Arnoult, A ;
Cibert, J ;
Tatarenko, S ;
Dietl, T ;
dAubigne, YM .
PHYSICAL REVIEW LETTERS, 1997, 79 (03) :511-514
[7]   Transport properties and origin of ferromagnetism in (Ga,Mn)As [J].
Matsukura, F ;
Ohno, H ;
Shen, A ;
Sugawara, Y .
PHYSICAL REVIEW B, 1998, 57 (04) :R2037-R2040
[8]   (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs [J].
Ohno, H ;
Shen, A ;
Matsukura, F ;
Oiwa, A ;
Endo, A ;
Katsumoto, S ;
Iye, Y .
APPLIED PHYSICS LETTERS, 1996, 69 (03) :363-365
[9]   Semiconductors - Toward functional spintronics [J].
Ohno, H .
SCIENCE, 2001, 291 (5505) :840-841
[10]   MAGNETOTRANSPORT PROPERTIES OF P-TYPE (IN,MN)AS DILUTED MAGNETIC III-V SEMICONDUCTORS [J].
OHNO, H ;
MUNEKATA, H ;
PENNEY, T ;
VONMOLNAR, S ;
CHANG, LL .
PHYSICAL REVIEW LETTERS, 1992, 68 (17) :2664-2667