Characteristics of indium-gallium-nitride multiple-quantum-well blue laser diodes grown by MOCVD

被引：25

作者：

Mack, MP ^{[1
]}

Abare, AC

Hansen, M

Kozodoy, P

Keller, S

Mishra, U

Coldren, LA

DenBaars, SP

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] Wright Lab, Wright Patterson AFB, OH 45433 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

InGaN; GaN; laser diode; MQW;

D O I：

10.1016/S0022-0248(98)00305-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Room temperature (RT) pulsed operation of blue (420 nm) nitride-based multi-quantum well (MQW) laser diodes grown on c-plane sapphire substrates has been demonstrated. Atmospheric pressure MOCVD was used to grow the active region of the device which consisted of a 10 pair In0.21Ga0.79N (2.5 nm)/In0.07Ga0.93N (5 nm) InGaN MQW. Threshold current densities as low as 12.6 kA/cm(2) were observed for 10 x 1200 um lasers with uncoated reactive ion etched (RIE) facets. The emission is strongly TE polarized and has a sharp transition in the far-field pattern above threshold. Laser diodes were tested under pulsed conditions lasted up to 6h at room temperature. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：837 / 840

页数：4

共 7 条

[1]

ABARE AC, 1997, LEOS SUMM TOP M MONT

[2] Shortest wavelength semiconductor laser diode [J].

Akasaki, I ;

Sota, S ;

Sakai, H ;

Tanaka, T ;

Koike, M ;

Amano, H .

ELECTRONICS LETTERS, 1996, 32 (12) :1105-1106

[3]

[Anonymous], 1997, BLUE LASER DIODE GAN, DOI DOI 10.1007/978-3-662-03462-0

[4]

*CREE RES INC, 1997, PR NEWSW 0729

[5] Room temperature pulsed operation of nitride based multi-quantum-well laser diodes with cleaved facets on conventional C-face sapphire substrates [J].

Itaya, K ;

Onomura, M ;

Nishio, J ;

Sugiura, L ;

Saito, S ;

Suzuki, M ;

Rennie, J ;

Nunoue, SY ;

Yamamoto, M ;

Fujimoto, H ;

Kokubun, Y ;

Ohba, Y ;

Hatakoshi, G ;

Ishikawa, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (10B) :L1315-L1317

[6] Growth and characterization of bulk InGaN films and quantum wells [J].

Keller, S ;

Keller, BP ;

Kapolnek, D ;

Abare, AC ;

Masui, H ;

Coldren, LA ;

Mishra, UK ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 1996, 68 (22) :3147-3149

[7]

KUARAMATA A, 1997, 2 INT C NITR SEM TOK

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