Subsecond luminescence intensity fluctuations of single CdSe quantum dots

被引:49
作者
Biju, V
Makita, Y
Nagase, T
Yamaoka, Y
Yokoyama, H
Baba, Y
Ishikawa, M
机构
[1] Natl Inst Adv Ind Sci & Technol, Hlth Technol Res Ctr, Nano Bioanal Team, Takamatsu, Kagawa 7610395, Japan
[2] Natl Inst Adv Ind Sci & Technol, Hlth Hazard Reduct Team, Takamatsu, Kagawa 7610395, Japan
[3] AIST, Nanotechnol Res Inst, Tsukuba, Ibaraki 3058568, Japan
[4] Nagoya Univ, Grad Sch Engn, Dept Appl Chem, Chikusa Ku, Nagoya, Aichi 4648603, Japan
关键词
D O I
10.1021/jp0526187
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Photoluminescence (PL) intermittency characteristics are examined for single quantum dots (QDs) in a CdSe QD sample synthesized at a slow rate at 75 degrees C. Although the PL quantum efficiency was relatively low (similar to 0.25), we noticed that the PL intensity of single CdSe QDs fluctuated on a subsecond time scale with short-lived "on" and "off' states. The subsecond PL intensity fluctuations of CdSe QDs are different from "on" and "off' PL blinking generally observed for QDs fluctuating on a millisecond to minute time scale. We characterized single QDs by identifying polarized excitations, topographic imaging using atomic force microscopy (AFM), and transmission electron microscopy (TEM). From analysis of the PL intensity trajectories from > 100 single CdSe QDs, the average intermittency time was 213 ms. From the PL quantum efficiency, slow growth of QDs, intensity trajectory analyses, and previous reports relating surface trap states and PL properties of QDs, we attribute the subsecond PL intensity fluctuations of single CdSe QDs and short-lived "on" and "off' states to a high-density distribution of homogeneous surface trap states.
引用
收藏
页码:14350 / 14355
页数:6
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