Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry

被引：32

作者：

Heil, SBS

Langereis, E

Kemmeren, A

Roozeboom, F

de Sanden, MCMV

Kessels, WMM

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

[2] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2005年 / 23卷 / 04期

关键词：

D O I：

10.1116/1.1938981

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In situ spectroscopic ellipsometry has been employed to determine the properties of titanium nitride (TiN) films during plasma-assisted atomic layer deposition by alternating TiCl4 precursor dosing and H-2-N-2 plasma exposure. Besides monitoring the film thickness when optimizing the half reactions, it is shown that spectroscopic ellipsometry is a very valuable tool for in situ studies of (air-sensitive) film properties such as resistivity, and for investigating the nucleation phase during initial film growth.) (c) 2005 American Vacuum Society.

引用

页码：L5 / L8

页数：4

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