Pure and mixed phase Bi2O3 thin films obtained by metal organic chemical vapor deposition

被引:92
作者
Bandoli, G [1 ]
Barreca, D [1 ]
Brescacin, E [1 ]
Rizzi, GA [1 ]
Tondello, E [1 ]
机构
[1] UNIV PADUA,DIPARTIMENTO SCI FARMACEUT,I-35131 PADUA,ITALY
关键词
D O I
10.1002/cvde.19960020605
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Thin films of bismuth oxides also have applications in gas sensors. Sensor characteristics depend on electrical properties and surface reactivity, which ultimately depend on the precursors and substrates used. It is demonstrated that it is possible to obtain different phase compositions ranging from pure alpha- to pure beta-Bi2O3 by controlling the pressure and flow rates of the carrier gas, O-2. The substrates used (Al2O3 or surface-oxidized Si(100)) are also shown to govern the phase purity of the films grown.
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页码:238 / &
页数:6
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