Doping and intermixing in CdS/CdTe solar cells fabricated under different conditions

被引：22

作者：

Jahn, U

Okamoto, T

Yamada, A

Konagai, M

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

[2] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 90卷 / 05期

关键词：

D O I：

10.1063/1.1388565

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin film CdS/CdTe solar cell structures have been investigated by spatially resolved cathodoluminescence (CL) spectroscopy. A postgrowth CdCl2 treatment of the CdTe layer was found to homogenize the distribution of acceptor-like defects or impurities leading to optimized p-type conversion of the polycrystalline CdTe. For values of the growth temperature (T-G) of about 600 degreesC, the intermixed region between the CdS layer and CdTe grains is surprisingly thin. However, for T-G as large as 630-650 degreesC, a gradual decrease of the CdTe band gap due to sulfur intermixing appears to be present up to 0.6 mum from the CdS/CdTe interface. The CL spectra of the CdS window layer exhibit two broad bands centered at 1.72 (red) and 2.04 eV (yellow). The yellow one is quenched by the CdCl2 treatment, indicating passivation or promoted outdiffusion of Cd interstitials. (C) 2001 American Institute of Physics.

引用

页码：2553 / 2558

页数：6